Inventor · Saint-Égrève, FR

Eric Neyret

24Patents
7h-index
17Co-inventors
58Inventor score

Filing activity: Sep 25, 2003 → Jun 6, 2011

Most-cited inventions

PatentTitleAreaCited byStatus
US6962858B2 Method for reducing free surface roughness of a semiconductor wafer Electricity 24 Expired
US7405136B2 Methods for manufacturing compound-material wafers and for recycling used donor substrates Electricity 15 Active
US6853802B2 Heat treatment for edges of multilayer semiconductor wafers Electricity 12 Expired
US8679944B2 Progressive trimming method Electricity 11 Active
US7081399B2 Method for producing a high quality useful layer on a substrate utilizing helium and hydrogen implantations Electricity 9 Expired
US6939783B2 Preventive treatment method for a multilayer semiconductor wafer Electricity 8 Expired
US6903032B2 Method for preparing a semiconductor wafer surface Electricity 7 Expired
US7514341B2 Finishing process for the manufacture of a semiconductor structure Electricity 5 Active
US7285471B2 Process for transfer of a thin layer formed in a substrate with vacancy clusters Electricity 4 Expired
US7190029B2 Preventive treatment method for a multilayer semiconductor wafer Electricity 4 Expired
US7138344B2 Method for minimizing slip line faults on a semiconductor wafer surface Electricity 3 Expired
US7883628B2 Method of reducing the surface roughness of a semiconductor wafer Electricity 3 Active
US7049250B2 Heat treatment for edges of multilayer semiconductor wafers Electricity 2 Expired
US7939427B2 Process for fabricating a substrate of the silicon-on-insulator type with reduced roughness and uniform thickness Electricity 2 Active
US7485545B2 Method of configuring a process to obtain a thin layer with a low density of holes Electricity 2 Active
US7749910B2 Method of reducing the surface roughness of a semiconductor wafer Electricity 2 Active
US7863158B2 Treatment for bonding interface stabilization Electricity 2 Active
US7666758B2 Process for fabricating a substrate of the silicon-on-insulator type with thin surface layer Electricity 1 Active
US8389412B2 Finishing method for a silicon on insulator substrate Electricity 1 Active
US7001832B2 Method for limiting slip lines in a semiconductor substrate Electricity 1 Expired
US8273636B2 Process for the transfer of a thin layer formed in a substrate with vacancy clusters Electricity 1 Active
US8461018B2 Treatment for bonding interface stabilization Electricity 0 Active
US7947571B2 Method for fabricating a semiconductor on insulator substrate with reduced Secco defect density Electricity 0 Active
US8216916B2 Treatment for bonding interface stabilization Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.