Post ion implant photoresist strip using a pattern fill and method
US7947605B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2007 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Feb 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26513
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is described for use in a system that removes an implant crust that is formed as an outermost layer of photoresist in a photoresist pattern that is supported by a workpiece. The photoresist pattern defines apertures which lead to an active device region. The active device region is formed by an ion implantation which produces the implant crust. A filler material is applied such that the filler material reaches a fill depth in each aperture. The workpiece and the filler material are exposed to a treatment environment to remove the implant crust on the laterally extending surface of the photoresist as the filler material protects the active device region. Thereafter, a remaining portion of the photoresist layer is removed. An associated intermediate assembly, including the workpiece, is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.