Patent · US Active

Training a machine learning system to determine photoresist parameters

US7949618B2 · kind B2 · utility

9Cited by

28References

19Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Joerg Bischoff · Ilmenau, DE
David Hetzer · Schenectady, US
Manuel Madriaga · San Jose, US

Key dates

Filing date	Mar 28, 2007
Grant date	May 24, 2011
Priority date	—
Expiry date	Nov 8, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70625
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

To train a machine learning system, a set of different values of one or more photoresist parameters, which characterize behavior of photoresist when the photoresist undergoes processing steps in a wafer application, is obtained. A set of diffraction signals is obtained using the set of different values of the one or more photoresist parameters. The machine learning system is trained using the set of measured diffraction signals as inputs to the machine learning system and the set of different values of the one or more photoresist parameters as expected outputs of the machine learning system.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.