Sputtering target and method for finishing surface of such target
US7951275B2 · kind B2 · utility
16Cited by
7References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 24, 2004 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Apr 26, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a hollow cathode sputtering target comprising an inner bottom face having a surface roughness of Ra≦1.0 μm, and preferably Ra≦0.5 μm. This hollow cathode sputtering target has superior sputter film evenness (uniformity), generates few arcing and particles, is capable of suppressing the peeling of the redeposited film on the bottom face, and has superior deposition characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.