Methods of manufacturing a semiconductor device using compositions for etching copper
US7951653B1 · kind B1 · utility
9Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2010 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Nov 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.