Methods of manufacturing resistors and structures thereof
US7951664B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2009 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Jul 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
Methods of manufacturing resistors, methods of manufacturing semiconductor devices, and structures thereof are disclosed. In one embodiment, a method of fabricating a resistor includes forming a transistor material stack over a workpiece and patterning the transistor material stack, forming a gate of a transistor in a first region of the workpiece and leaving a portion of the transistor material stack in a second region of the workpiece. A top portion of the transistor material stack is removed in the second region, and a top portion of the workpiece is removed in the first region proximate the gate of the transistor, forming recessed regions in the workpiece in the first region. A semiconductive material is formed in the recessed regions of the workpiece in the first region and over a portion of the transistor material stack in the second region, forming a resistor in the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.