Copper interconnect structure with amorphous tantalum iridium diffusion barrier
US7951708B2 · kind B2 · utility
4Cited by
6References
13Claims
0Family size
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Key dates
| Filing date | Jun 3, 2009 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Jul 31, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a diffusion barrier for use in semiconductor device manufacturing includes depositing, by a physical vapor deposition (PVD) process, an iridium doped, tantalum based barrier layer over a patterned interlevel dielectric (ILD) layer, wherein the barrier layer is deposited with an iridium concentration of at least 60 atomic % such that the barrier layer has a resulting amorphous structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.