Semiconductor device having different metal gate structures
US7952118B2 · kind B2 · utility
10Cited by
26References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 28, 2007 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Jan 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor includes a channel region in a semiconductor substrate, a gate dielectric film on the channel region, and a gate on the gate dielectric film. The gate includes a doped metal nitride film, formed from a nitride of a first metal and doped with a second metal which is different from the first metal, and a conductive polysilicon layer formed on the doped metal nitride film. The gate may further include a metal containing capping layer interposed between the doped metal nitride film and the conductive polysilicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.