Shield contacts in a shielded gate MOSFET

US7952141B2 · kind B2 · utility

Assignee

• FAIRCHILD SEMICONDUCTOR CORPORATION · US

Inventors

• Dixie Dunn · Salt Lake City, US
• Paul Thorup · Hillsboro, US
• Dean E. Probst · West Jordan, US
• Michael D. Gruenhagen · Salt Lake City, US

Key dates

• Filing date: Jul 24, 2009
• Grant date: May 31, 2011
• Expiry date: Jul 24, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A semiconductor structure comprises an active region comprising trenches extending into a semiconductor region. Each trench includes a shield electrode and a gate electrode. The semiconductor structure also comprises a shield contact region adjacent to the active region. The shield contact region comprises at least one contact trench extending into the semiconductor region. The shield electrode from at least one of the trenches in the active region extends along a length of the contact trench. The semiconductor structure also comprises an interconnect layer extending over the active region and the shield contact region. In the active region the interconnect layer is isolated from the gate electrode in each trench by a dielectric layer and contacts mesa surfaces of the semiconductor region adjacent to the trenches. In the shield contact region the interconnect layer contacts the shield electrode and the mesa surfaces of the semiconductor region adjacent to the contact trench.