Patent · US Active

Method for producing a power semiconductor module comprising surface-mountable flat external contacts

US7955901B2 · kind B2 · utility

2Cited by

11References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Henrik Ewe · Burglengenfeld, DE
Stefan Landau · Usingen, DE
Klaus Schiess · Allensbach, DE
Robert Bergmann · Regensburg, DE
Alvin Wee Beng Tatt · Melaka City, MY
Soon Lock Goh · Melaka City, MY
Joachim Mahler · Regensburg, DE
Boris Plikat · Tegernheim, DE
Reimund Engl · Munich, DE

Key dates

Filing date	Oct 4, 2007
Grant date	Jun 7, 2011
Priority date	—
Expiry date	May 26, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/351
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a power semiconductor module having surface mountable flat external contact areas is disclosed. At least one power semiconductor chip is fixed by its rear side on a drain external contact. An insulation layer covers the top side over the side edges of the semiconductor chip as far as the inner housing plane was a leaving free the source and gate contact areas on the top side of the semiconductor chip and also was partly leaving free the top sides of the corresponding external contacts.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.