Structure and method to control oxidation in high-k gate structures
US7955926B2 · kind B2 · utility
0Cited by
11References
22Claims
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Key dates
| Filing date | Mar 26, 2008 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Aug 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, the present invention provides a method of fabricating a semiconducting device that includes providing a substrate including at least one semiconducting region and at least one oxygen source region; forming an oxygen barrier material atop portions of an upper surface of the at least one oxygen region; forming a high-k gate dielectric on the substrate including the at least one semiconducting region, wherein oxygen barrier material separates the high-k gate dielectric from the at least one oxygen source material; and forming a gate conductor atop the high-k gate dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.