Patent · US Active

Integrated circuitry

US7956416B2 · kind B2 · utility

18Cited by

70References

20Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

David H. Wells · Boise, US
Eric Blomiley · Boise, US

Key dates

Filing date	May 29, 2009
Grant date	Jun 7, 2011
Priority date	—
Expiry date	Sep 3, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Some embodiments include formation of at least one cavity in a first semiconductor material, followed by epitaxially growing a second semiconductor material over the first semiconductor material and bridging across the at least one cavity. The cavity may be left open, or material may be provided within the cavity. The material provided within the cavity may be suitable for forming, for example, one or more of electromagnetic radiation interaction components, transistor gates, insulative structures, and coolant structures. Some embodiments include one or more of transistor devices, electromagnetic radiation interaction components, transistor devices, coolant structures, insulative structures and gas reservoirs.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.