Trench IGBT with depletion stop layer
US7956419B2 · kind B2 · utility
2Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2005 |
| Grant date | Jun 7, 2011 |
| Priority date | — |
| Expiry date | Nov 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A very low VCEON non punch through trench IGBT built-in non-epitaxial float zone silicon has a depletion stop layer structure added to its bottom surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.