Film formation apparatus and method for using the same
US7959737B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2007 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Mar 15, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for using a film formation apparatus for a semiconductor process includes a first cleaning process of removing by a first cleaning gas a by-product film from an inner surface of a reaction chamber of the film formation apparatus, while supplying the first cleaning gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure to activate the first cleaning gas. The method further includes a second cleaning process of then removing by a second cleaning gas a contaminant from the inner surface of the reaction chamber, while supplying the second cleaning gas into the reaction chamber, and setting the interior of the reaction chamber at a second temperature and a second pressure to activate the second cleaning gas. The second cleaning gas includes a chlorine-containing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.