Polishing method
US7960188B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2009 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | May 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for polishing a substrate having a metal film thereon is described. The substrate has metal interconnects formed from part of the metal film. The polishing method includes performing a first polishing process of removing the metal film, after the first polishing process, performing a second polishing process of removing the barrier film, after the second polishing process, performing a third polishing process of polishing the insulating film. During the second polishing process and the third polishing process, a polishing state of the substrate is monitored with an eddy current sensor, and the third polishing process is terminated when an output signal of the eddy current sensor reaches a predetermined threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.