Orientation-dependent etching of deposited AlN for structural use and sacrificial layers in MEMS
US7960200B2 · kind B2 · utility
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7References
39Claims
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Key dates
| Filing date | Apr 24, 2007 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Jun 2, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0118
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In accordance with the present invention, accurate and easily controlled sloped walls may be formed using AlN and preferably a heated TMAH for such purpose as the fabrication of MEMS devices, wafer level packaging and fabrication of fluidic devices. Various embodiments are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.