Confinement techniques for non-volatile resistive-switching memories
US7960216B2 · kind B2 · utility
19Cited by
17References
8Claims
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Key dates
| Filing date | May 8, 2009 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | May 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
Abstract
Confinement techniques for non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. A resistive switching memory element described herein includes a first electrode adjacent to an interlayer dielectric, a spacer over at least a portion of the interlayer dielectric and over a portion of the first electrode and a metal oxide layer over the spacer and the first electrode such that an interface between the metal oxide layer and the electrode is smaller than a top surface of the electrode.
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