Transistors including supported gate electrodes

US7960756B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Scott Sheppard · Chapel Hill, US
• Scott Allen · Apex, US

Key dates

• Filing date: May 19, 2009
• Grant date: Jun 14, 2011
• Expiry date: May 19, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A transistor includes a protective layer having an opening extending therethrough on a substrate, and a gate electrode in the opening. First portions of the gate electrode laterally extend on surface portions of the protective layer outside the opening on opposite sides thereof, and second portions of the gate electrode are spaced apart from the protective layer and laterally extend beyond the first portions. Related devices are also discussed.