Fabrication of metal film stacks having improved bottom critical dimension
US7960835B2 · kind B2 · utility
0Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | May 4, 2009 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Oct 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating metal film stacks is described that reduces or eliminates adverse effects of photolithographic misalignments. A bottom critical dimension is increased by removal of a bottom titanium nitride barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.