Tunneling magnetic detecting element having insulation barrier layer and method for making the same
US7961442B2 · kind B2 · utility
1Cited by
4References
11Claims
0Family size
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Key dates
| Filing date | Nov 29, 2007 |
| Grant date | Jun 14, 2011 |
| Priority date | — |
| Expiry date | Apr 8, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A tunneling magnetic detecting element includes an insulating barrier layer having a layered structure including a Ti—O sublayer and a Ta—O sublayer. The Ta concentration in the insulating barrier layer is set to be more than 0 at % but not more than about 7 at % with respect to a total of 100 at % of Ti and Ta constituting the insulating barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.