Processing system and method for chemically treating a substrate
US7964058B2 · kind B2 · utility
7Cited by
19References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2005 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Jan 9, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D11/026
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.