Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications

US7964430B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Tae Kyung Won · San Jose, US
• Soo Young Choi · Fremont, US
• Yong Kee Chae · Pleasanton, US
• Liwei Li · Kunming, CN
• Shuran Sheng · Sunnyvale, US

Key dates

• Filing date: May 23, 2007
• Grant date: Jun 21, 2011
• Expiry date: Jul 16, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/94

Abstract

Methods and apparatus for reducing defects on transparent conducting oxide (TCO) layer are provided. In one embodiment, a method for depositing a silicon layer on a transparent conducting oxide (TCO) layer may include providing a substrate having a TCO layer disposed thereon, wherein the TCO layer has a peripheral region and a cell integrated region, the cell integrated region having laser scribing patterns disposed thereon, positioning the substrate on a substrate support assembly disposed in a processing chamber, wherein the substrate support assembly has a roughened surface in contact with the substrate, contacting a shadow frame to the peripheral region of the TCO layer and to the substrate support assembly thereby creating an electrical ground path between the TCO layer and substrate support through the shadow frame, and depositing a silicon containing layer on the TCO layer through an aperture of the shadow frame.