Film formation apparatus for semiconductor process and method for using same
US7964516B2 · kind B2 · utility
5Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2009 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Aug 19, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for using a film formation apparatus includes, in order to inhibit metal contamination: performing a cleaning process using a cleaning gas on an inner wall of a process container and a surface of a holder with no productive target objects held thereon; and then, performing a coating process of forming a silicon nitride film by alternately supplying a silicon source gas and a nitriding gas to cover with the silicon nitride film the inner wall of the process container and the surface of the holder with no productive target objects held thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.