Method and apparatus for photomask etching
US7964818B2 · kind B2 · utility
3Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2006 |
| Grant date | Jun 21, 2011 |
| Priority date | — |
| Expiry date | Nov 24, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/81
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of fabricating yttria parts is provided herein. In one embodiment, the method includes sintering a yttria sample, machining the sintered sample to form a part, and annealing the part in a three-stage process that includes heating the part at a predetermined heating rate, maintaining the part at a constant annealing temperature, and cooling the part at a predetermined cooling rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.