Low-K SiC copper diffusion barrier films

US7968436B1 · kind B1 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Yongsik Yu · Lake Oswego, US
• Karen Billington · Beaverton, US
• Xingyuan Tang · West Linn, US
• Haiying Fu · West Linn, US
• Michael Carris · Tualatin, US
• William Crew · Portland, US

Key dates

• Filing date: Jul 2, 2009
• Grant date: Jun 28, 2011
• Expiry date: Jul 14, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/931
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.