Film forming method and film forming apparatus
US7968472B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2009 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Oct 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02356
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.