High-frequency bipolar transistor and method for the production thereof

US7968972B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Josef Bock · Birkenfeld, DE
• Thomas Meister · Taufkirchen, DE
• Reinhard Stengl · Stadtbergen, DE
• Herbert Schafer · Höhenkirchen-Siegertsbrunn, DE

Key dates

• Filing date: Mar 3, 2010
• Grant date: Jun 28, 2011
• Expiry date: Mar 3, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/231

Abstract

A high-frequency bipolar transistor includes an emitter contact adjoining an emitter connection region, a base contact adjoining a base connection region, and a collector contact adjoining a collector connection region. A first insulation layer is disposed on the base connection region. The collector connection region contains a buried layer, which connects the collector contact to a collector zone. A silicide or salicide region is provided on the buried layer and connects the collector contact to the collector zone in a low-impedance manner. A second insulation layer is disposed on the collector connection region but not on the silicide region.