Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor
US7969693B2 · kind B2 · utility
2Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2007 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Apr 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/132
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.