Patent · US Active

Self aligned double patterning flow with non-sacrificial features

US7972959B2 · kind B2 · utility

17Cited by

6References

16Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Bencherki Mebarki · Santa Clara, US
Li Yan Miao · San Francisco, US
Kenlin Huang · Fremont, US

Key dates

Filing date	Dec 1, 2008
Grant date	Jul 5, 2011
Priority date	—
Expiry date	Dec 23, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76885
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Embodiments of the present invention pertain to methods of forming features on a substrate using a self-aligned double patterning (SADP) process. A conformal layer of non-sacrificial material is formed over features of sacrificial structural material patterned near the optical resolution of a photolithography system using a high-resolution photomask. An anisotropic etch of the non-sacrificial layer leaves non-sacrificial ribs above a substrate. A gapfill layer deposited thereon may be etched or polished back to form alternating fill and non-sacrificial features. No hard mask is needed to form the non-sacrificial ribs, reducing the number of processing steps involved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.