Purge step-controlled sequence of processing semiconductor wafers
US7972961B2 · kind B2 · utility
4Cited by
43References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2008 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Mar 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32743
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of processing semiconductor substrates includes: depositing a film on a substrate in a reaction chamber; evacuating the reaction chamber without purging the reaction chamber; opening a gate valve and replacing the substrate with a next substrate via the transfer chamber wherein the pressure of the transfer chamber is controlled to be higher than that of the reaction chamber before and while the gate valve is opened; repeating the above steps and removing the substrate from the reaction chamber; and purging and evacuating the reaction chamber, and cleaning the reaction chamber with a cleaning gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.