High density plasma gapfill deposition-etch-deposition process etchant

US7972968B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Young S. Lee · San Jose, US
• Ying Rui · Meridian, US
• Dmitry Lubomirsky · Cupertino, US
• Daniel J. Hoffman · Saratoga, US
• Jang-Gyoo Yang · San Jose, US
• Anchuan Wang · San Jose, US

Key dates

• Filing date: Aug 18, 2008
• Grant date: Jul 5, 2011
• Expiry date: Sep 10, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31116
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CxFy, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.