Patent · US Active

Spin device

US7974120B2 · kind B2 · utility

0Cited by

1References

27Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gerhard Poeppel · Duggendorf, DE
Hans-Joerg Timme · Ottobrunn, DE
Werner Robl · Regensburg, DE

Key dates

Filing date	Jan 23, 2009
Grant date	Jul 5, 2011
Priority date	—
Expiry date	Jan 2, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01F10/3254
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

According to an embodiment of the present invention, a spin device includes an intermediate semiconductor region arranged between a first terminal and a second terminal, wherein the first terminal is adapted to provide a current having a first degree of spin polarization to the intermediate semiconductor region, and wherein the second terminal is adapted to output the current having a second degree of spin polarization. The spin device further includes a spin selective scattering structure abutting the intermediate semiconductor region, the spin selective scattering structure being adapted such that the first degree of spin polarization is altered to be the second degree, wherein the spin selective scattering structure comprises a control electrode being electrically insulated from the intermediate semiconductor region, and wherein the control electrode is adapted to apply an electrical field perpendicular to a direction of the current through the intermediate semiconductor region to control a magnitude of the current.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.