Multi-gas straight channel showerhead
US7976631B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2007 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Jul 31, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/87153
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.