Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems

US7976634B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• David K. Carlson · San Jose, US
• Satheesh Kuppurao · San Jose, US
• Howard Beckford · San Jose, US
• Herman Diniz · Fremont, US
• Kailash Kiran Patalay · Santa Clara, US
• Brian H. Burrows · San Jose, US
• Jeffrey Ronald Campbell · San Francisco, US
• Zouming Zhu · Santa Clara, US
• Xiaowei Li · Shanghai, CN
• Errol Antonio C. Sanchez · Tracy, US

Key dates

• Filing date: Nov 8, 2007
• Grant date: Jul 12, 2011
• Expiry date: Jul 12, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T137/0318
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method and apparatus for delivering precursor materials to a processing chamber is described. The apparatus includes a gas distribution assembly having multiple gas delivery zones. Each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source. The at least one source of non-thermal energy is may be varied to control the intensity of wavelengths from the infrared light source.