Embedded multi-inductive large area plasma source
US7976674B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 13, 2007 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Feb 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32568
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Plasma generating devices, systems and processes are provided in which hybrid capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) sources use a plurality of primary plasma generating cells embedded into large area electrode or elsewhere in communication with a plasma processing chamber. Plasma is generated and maintained by a shaped low-inductance element within each of a plurality of locally enhanced ICP micro-cells coupled to the chamber through a CCP electrode. The source is suitable for processing large diameter (300 mm and larger) semiconductor wafers and large area panels, including plasma screen displays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.