Method for removing a pore-generating material from an uncured low-k dielectric film
US7977256B2 · kind B2 · utility
484Cited by
25References
24Claims
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Key dates
| Filing date | Mar 6, 2008 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Apr 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02203
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a porous low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and adjusting a residual amount of cross-linking inhibitor, such as pore-generating material, within the low-k dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.