Method for plasma etching performance enhancement
US7977390B2 · kind B2 · utility
19Cited by
52References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2006 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Mar 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching features in a dielectric layer is provided. A mask is formed over the dielectric layer. A protective silicon-containing coating is formed on exposed surfaces of the mask. The features are etched through the mask and protective silicon-containing coating. The features may be partially etched before the protective silicon-containing coating is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.