Semiconductor layer with a Ga2O3 system
US7977673B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2004 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Dec 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a semiconductor layer in which a GaN system epitaxial layer having high crystal quality can be obtained.The semiconductor layer includes a β-Ga2O3 substrate 1 made of a β-Ga2O3 single crystal, a GaN layer 2 formed by subjecting a surface of the β-Ga2O3 substrate 1 to nitriding processing, and a GaN growth layer 3 formed on the GaN layer 2 through epitaxial growth by utilizing an MOCVD method. Since lattice constants of the GaN layer 2 and the GaN growth layer 3 match each other, and the GaN growth layer 3 grows so as to succeed to high crystalline of the GaN layer 2, the GaN growth layer 3 having high crystalline is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.