Method for detecting polishing end in CMP polishing device, CMP polishing device, and semiconductor device manufacturing method
US7981309B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 2006 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Nov 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The spectral reflectance spectrum of an object of polishing that has reached the polishing endpoint is found ahead of time, the spectral reflectance spectrum of the object of polishing is found during polishing, and the correlation coefficient of these is seen as parameter 1. Meanwhile, the sum of the absolute values of the difference between the first order differentials of these is seen as parameter 2. Then, when parameter 1 is in a range exceeding a specific value, and parameter 2 is at its minimum, it is concluded that the polishing endpoint has been reached. Thus, it is possible to provide a method for detecting the polishing endpoint in a highly reliable CMP polishing apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.