Semiconductor device, data element thereof and method of fabricating the same
US7981742B2 · kind B2 · utility
2Cited by
2References
25Claims
0Family size
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Key dates
| Filing date | Jul 2, 2008 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | May 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B20/25
Abstract
A method of fabricating a semiconductor device is provided. The method comprises: (a) providing a first and a second conductor; (b) providing a conductive layer; (c) forming a part of the conductive layer into a data storage layer by a plasma oxidation process, wherein the data storage layer is positioned between the first and the second conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.