Sacrificial nitride and gate replacement
US7981745B2 · kind B2 · utility
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5References
18Claims
0Family size
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Key dates
| Filing date | Aug 30, 2007 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Nov 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/697
Abstract
Methods of forming a top oxide around a charge storage material layer of a memory cell and methods of improving quality of a top oxide around a charge storage material layer of a memory cell are provided. The method can involve providing a charge storage layer on a semiconductor substrate, a nitride layer on the charge storage layer, and a first poly layer on the nitride layer, and converting at least a portion of the nitride layer to a top oxide. By converting at least a portion of a nitride layer to a top oxide layer, the quality of the resultant top oxide layer can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.