Inventor · San Jose, CA, US

Fred Cheung

21Patents
11h-index
40Co-inventors
71Inventor score

Filing activity: Apr 23, 2001 → Sep 20, 2013

Most-cited inventions

PatentTitleAreaCited byStatus
US6642573B1 Use of high-K dielectric material in modified ONO structure for semiconductor devices Emerging Cross-Sectional Technologies 174 Expired
US6451641B1 Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric material Electricity 110 Expired
US6750066B1 Precision high-K intergate dielectric layer Electricity 83 Expired
US6740605B1 Process for reducing hydrogen contamination in dielectric materials in memory devices Electricity 83 Expired
US6630383B1 Bi-layer floating gate for improved work function between floating gate and a high-K dielectric layer Electricity 46 Expired
US7033957B1 ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices Emerging Cross-Sectional Technologies 42 Expired
US6949481B1 Process for fabrication of spacer layer with reduced hydrogen content in semiconductor device Electricity 33 Expired
US6794764B1 Charge-trapping memory arrays resistant to damage from contact hole information Emerging Cross-Sectional Technologies 27 Expired
US7163860B1 Method of formation of gate stack spacer and charge storage materials having reduced hydrogen content in charge trapping dielectric flash memory device Emerging Cross-Sectional Technologies 17 Expired
US6514844B1 Sidewall treatment for low dielectric constant (low K) materials by ion implantation Electricity 13 Expired
US6610594B2 Locally increasing sidewall density by ion implantation Electricity 11 Expired
US6735123B1 High density dual bit flash memory cell with non planar structure Emerging Cross-Sectional Technologies 8 Expired
US7732281B1 Methods for fabricating dual bit flash memory devices Electricity 3 Active
US7829936B2 Split charge storage node inner spacer process Electricity 2 Active
US8564042B2 Dual storage node memory Electricity 1 Active
US8486782B2 Flash memory devices and methods for fabricating the same Electricity 1 Active
US8329598B2 Sacrificial nitride and gate replacement Electricity 0 Active
US9461151B2 Dual storage node memory Electricity 0 Active
US7867848B2 Methods for fabricating dual bit flash memory devices Electricity 0 Active
US8748972B2 Flash memory devices and methods for fabricating same Electricity 0 Active
US7981745B2 Sacrificial nitride and gate replacement Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.