Patent · US Active

Feature patterning methods and structures thereof

US7981789B2 · kind B2 · utility

2Cited by

1References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Schulz · Austin, US
Sergei Postnikov · Grenoble, FR

Key dates

Filing date	Nov 14, 2008
Grant date	Jul 19, 2011
Priority date	—
Expiry date	Jul 18, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods of patterning features, methods of manufacturing semiconductor devices, and semiconductor devices are disclosed. In one embodiment, a method of patterning a feature includes forming a first portion of the feature in a first material layer. A second portion of the feature is formed in the first material layer, and a third portion of the feature is formed in a second material layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.