Phase-change random access memory device and method of manufacturing the same
US7981797B2 · kind B2 · utility
4Cited by
4References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 25, 2008 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Jul 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/231
Abstract
A method of manufacturing a phase-change random access memory device includes forming an interlayer insulating film on a semiconductor substrate, on which a bottom structure is formed, and patterning the interlayer insulating film to form a contact hole, forming a spacer on the side wall of the contact hole; forming a dielectric layer in the contact hole, and removing the spacer to form a bottom electrode contact hole. Therefore, the contact area between the bottom electrode contact and the phase-change material layer can be minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.