Film formation method and apparatus for semiconductor process
US7981809B2 · kind B2 · utility
3Cited by
19References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2005 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Dec 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.