Flash memory with recessed floating gate

US7982255B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventor

• Todd R. Abbott · Boise, US

Key dates

• Filing date: Mar 10, 2008
• Grant date: Jul 19, 2011
• Expiry date: Jan 16, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

A flash memory device wherein the floating gate of the flash memory is defined by a recessed access device. The use of a recessed access device results in a longer channel length with less loss of device density. The floating gate can also be elevated above the substrate a selected amount so as to achieve a desirable coupling between the substrate, the floating gate and the control gate comprising the flash cell.