Trenched shield gate power semiconductor devices and methods of manufacture
US7982265B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2008 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Aug 19, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region. The active trench, which includes sidewalls and bottom lined with dielectric material, is substantially filled with a first conductive layer and a second conductive layer. The second conductive layer forms a gate electrode and is disposed above the first conductive layer and is separated from the first conductive layer by an inter-electrode dielectric material. The device also includes source regions having the first conductivity type formed inside the well region and adjacent the active trench and a charge control trench that extends deeper into the drift region than the active trench and is substantially filled with material to allow for vertical charge control in the drift region. The charge control trench can be lined with a layer of dielectric material and substantially filled with conductive material. The active trench can include a second shield electrode made of conductive material disposed belo…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.