Method to improve metal defects in semiconductor device fabrication
US7982286B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2006 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Jul 21, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention, in one aspect, provides a method of manufacturing a semiconductor device. This method includes providing a semiconductor substrate and depositing a metal layer over the semiconductor substrate that has an overall thickness of about 1 micron or greater. The metal layer is formed by depositing a first portion of the thickness of the metal layer, which has a compressive or tensile stress associated therewith over the semiconductor substrate. A stress-compensating layer is deposited over the first portion, such that the stress-compensating layer imparts a stress to the first portion that is opposite to the compressive or tensile stress associated with the first portion. A second portion of the thickness of the metal layer is then deposited over the stress-compensating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.