Bulk acoustic device and method for fabricating
US7982363B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 14, 2007 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | May 14, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a bulk acoustic wave (BAW) device comprising providing a growth substrate and growing an Group-III nitride epitaxial layer on the growth substrate. A first electrode is deposited on the epitaxial layer. A carrier substrate is provided and the growth substrate, epitaxial layer and first electrode combination is flip-chip mounted on the carrier substrate. The growth substrate is removed and a second electrode is deposited on the epitaxial layer with the epitaxial layer sandwiched between the first and second electrodes. A bulk acoustic wave (BAW) device comprises first and second metal electrodes and a Group-III nitride epitaxial layer sandwiched between the first and second electrodes. A carrier substrate is included, with the first and second electrodes and epitaxial layer on the carrier substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.