Methods utilizing microwave radiation during formation of semiconductor constructions
US7985617B2 · kind B2 · utility
3Cited by
4References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2008 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | Oct 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.